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IXFA4N100Q
IXFP4N100Q
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-263 Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 4.7 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
1.5
2.5
1050
120
30
17
15
32
18
39
9
23
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.80 ° C/W
R thCS
TO-220
0.50
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
4
A
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
16
1.5
A
V
TO-220 Outline
t rr
Q RM
I RM
Note
1.
I F = I S , -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
0.52
1.80
250 ns
μ C
A
Pins:
1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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